Search Result "enhancement-type MOSFET"
Analysis and Effects of Voids in Cylindrical Surrounding Double- Gate MOSFET for the RF Switches
Journal: Nanoscience & Nanotechnology-Asia
Volume: 7 Issue: 2 Year: 2017 Page: 243-251
Author(s): Viranjay M. Srivastava
Metal Oxide Field Effect Transistor (MOSFET)
Ebook: Solid State & Microelectronics Technology
Volume: 1 Year: 2023
Author(s):
Doi: 10.2174/9789815079876123010006
Signal Processing for Wireless Communication MIMO System with Nano- Scaled CSDG MOSFET based DP4T RF Switch
Journal: Recent Patents on Nanotechnology
Volume: 9 Issue: 1 Year: 2015 Page: 26-32
Author(s): Viranjay M. Srivastava
Device Structure Modifications in Conventional Tunnel Field Effect Transistor (TFET) for Low-power Applications
Ebook: Nanoelectronics Devices: Design, Materials, and Applications (Part I)
Volume: 1 Year: 2023
Author(s):
Doi: 10.2174/9789815136623123010008
Compact Modeling of Engineered Strain
Ebook: Recent Topics on Modeling of Semiconductor Processes, Devices, and Circuits
Volume: 1 Year: 2011
Author(s): Richard Q. Williams
Doi: 10.2174/978160805074111101010081
Role of Nanomaterials: In Novel Semiconductor Field Effect Transistors
Ebook: Nanoscale Field Effect Transistors: Emerging Applications
Volume: 1 Year: 2023
Author(s):
Doi: 10.2174/9789815165647123010004
Role of Nanotechnology in Nanoelectronics
Ebook: Nanoelectronics Devices: Design, Materials, and Applications (Part I)
Volume: 1 Year: 2023
Author(s):
Doi: 10.2174/9789815136623123010004
Performance Analysis of Rectangular Core-Shell Double Gate Junctionless Transistor (RCS-DGJLT)
Ebook: Nanoelectronics Devices: Design, Materials, and Applications (Part I)
Volume: 1 Year: 2023
Author(s):
Doi: 10.2174/9789815136623123010006
Fast Complete Ternary Addition with Novel 3:1 T-Multiplexer
Journal: Micro and Nanosystems
Volume: 14 Issue: 4 Year: 2022 Page: 304-313
Author(s): Rakesh K. Singh
Optimizing IC Design for Manufacturability - 2011 Update
Journal: Recent Patents on Electrical & Electronic Engineering
Volume: 5 Issue: 2 Year: 2012 Page: 134-154
Author(s): Artur Balasinski