Abstract
More or less than 17 years since D. Kahng and M. M. Atalla first conveyed
the demonstration of a Si-SiO2 MOS transistor (MOSFET). In our regular lives, the
impression of these MOS-based IC’s was imparted -just beginning to be felt. This
incredible explosion has been caused by many inventions and countless numbers of
perhaps small but crucial contributions by many researchers. Historical signs of
progress of the metal-oxide-semiconductor field-effect transistor (MOSFET) during
the last 60 years are appraised, from the 1928 patent disclosures of the field-effect
conductivity modulation concept and the semiconductor triodes structures proposed
by Lilienfeld to the 1947 Shockley-originated efforts which controlled to the
laboratory demonstration of the modern silicon MOSFET 30 years later in 1960. A
review is then made of the mileposts of the past 30 years leading to the latest
submicron silicon logic CMOS (Complementary MOS and BICMOS (Combination
of Bipolar-junction-Transistor and CMOS) arrays and the three-dimensional and
ferroelectric extensions of Dennard‘s one-transistor dynamic random access memory
(DRAM) cell. This chapter discusses the fabrication of MOSFET and its principal
operations based on the concept of metal-oxide-semiconductor technology. Further,
the discussion is focused on the details mathematical modeling of MOS capacitors,
device characteristics, and the process of channel length modulation and its
application. The conversation is continuing on the concept of CMOS technology and
its combination with the transistor – the BiCMOS technology.