Search Result "nanometer MOSFET"
Analytical Modeling of Threshold Voltage and Drain-Induced-Barrier- Lowering Variations Due to Gate Length Fluctuation in Nanometer MOSFETs
Journal: Recent Advances in Electrical & Electronic Engineering
Volume: 10 Issue: 2 Year: 2017 Page: 128-133
Author(s): Lu Weifeng,Wang Guangyi,Lin Mi,Sun Lingling
Inversion Charge Quantization Model for Double Gate Mosfets
Journal: Nanoscience & Nanotechnology-Asia
Volume: 8 Issue: 0 Year: 2018 Page: 1-10
Author(s): Vimala P,Nithin Kumar N.R
Thickness Modeling of Short-Channel Cylindrical Surrounding Double- Gate MOSFET at Strong Inversion Using Depletion Depth Analysis
Journal: Micro and Nanosystems
Volume: 13 Issue: 3 Year: 2021 Page: 319-325
Author(s): Abha Dargar,Viranjay M. Srivastava
Analysis of Lanthanum Oxide Based Double-Gate SOI MOSFET using Monte-Carlo Process
Journal: Recent Patents on Nanotechnology
Volume: 18 Issue: 0 Year: 2024 Page: 1-13
Author(s): Viranjay. M. Srivastava
Suppression of Timing Variations due to Random Dopant Fluctuation by Back-gate Bias in a Nanometer CMOS Inverter
Journal: Recent Advances in Electrical & Electronic Engineering
Volume: 14 Issue: 3 Year: 2021 Page: 339-346
Author(s): Kai Zhang,Weifeng Lu,Peng Si,Zhifeng Zhao,Tianyu Yu
Device Structure Modifications in Conventional Tunnel Field Effect Transistor (TFET) for Low-power Applications
Ebook: Nanoelectronics Devices: Design, Materials, and Applications (Part I)
Volume: 1 Year: 2023
Author(s):
Doi: 10.2174/9789815136623123010008
Transition from Conventional FETs to Novel FETs, SOI, Double Gate, Triple Gate, and GAA FETS
Ebook: Nanoscale Field Effect Transistors: Emerging Applications
Volume: 1 Year: 2023
Author(s):
Doi: 10.2174/9789815165647123010005
Performance Comparison of InAs Based DG-MOSFET with Respect to SiO2 and Gate Stack Configuration
Journal: Nanoscience & Nanotechnology-Asia
Volume: 10 Issue: 4 Year: 2020 Page: 419-424
Author(s): Sanjit K. Swain,Sudhansu M. Biswal,Satish K. Das,Sarosij Adak,Biswajit Baral
Role of Nanotechnology in Nanoelectronics
Ebook: Nanoelectronics Devices: Design, Materials, and Applications (Part I)
Volume: 1 Year: 2023
Author(s):
Doi: 10.2174/9789815136623123010004
Investigation of Crystal Size Impacts on the Tunneling Current in Germanium Nanocrystal Metal-Oxide-Semiconductor Transistors
Journal: Current Nanoscience
Volume: 9 Issue: 1 Year: 2013 Page: 103-106
Author(s): L. F. Mao,C. Y. Zhu,L. J. Zhang,A. M. Ji,X. Y. Liu