Abstract
With the rapid scaling of transistors in the nanometer regime, various shortchannel effects emerge in short-channel devices; researchers are looking for an
alternative device to replace complementary MOSFET (CMOS) in circuit applications.
TFETs are considered to be a good replacement for the conventional MOSFET in the
upcoming technologies. The methods used for making ION higher also impacts the IOFF
current. So, the overall current ratio remains unaltered. To overcome this problem, a
technique has been developed and adopted in this work that not only improves the
current ratio but also makes the subthreshold swing steeper. The major improvements
are the reduction of short channel effects, enhancing current ratio reducing dynamic
power consumption. Negative capacitance being a new phenomenon, helps in
providing improvised results. The device optimized in this work has given values of
Subthreshold swing as 53.75 mV/decade, ION and IOFF as 4.295*10-5 A/μm, 6.01*10-15
A/μm, respectively. DIBL calculated for conventional NCTFET is 61.2 mV/V, and for
proposed NCTFET is 31.92 mV/V. So DIBL improvement of 52.2% has been
achieved.