Search Result "layered T (LT) gate"
Performance Analysis of Gate Engineered High-K Gate Oxide Stack SOIFin-FET for 5 nm Technology
Journal: Nanoscience & Nanotechnology-Asia
Volume: 13 Issue: 1 Year: 2023 Page: 2-8
Author(s):
The Single-Gate SOI MOSFET Model
Ebook: Bipolar Transistor and MOSFET Device Models
Volume: 1 Year: 2016
Author(s): Kunihiro Suzuki
Doi: 10.2174/9781681082615116010011
Performance Comparison of InAs Based DG-MOSFET with Respect to SiO2 and Gate Stack Configuration
Journal: Nanoscience & Nanotechnology-Asia
Volume: 10 Issue: 4 Year: 2020 Page: 419-424
Author(s): Sanjit K. Swain,Sudhansu M. Biswal,Satish K. Das,Sarosij Adak,Biswajit Baral
Utilization of LTEx Feynman Gate in Designing the QCA Based Reversible Binary to Gray and Gray to Binary Code Converters
Journal: Micro and Nanosystems
Volume: 12 Issue: 3 Year: 2020 Page: 187-200
Author(s): Chiradeep Mukherjee,Saradindu Panda,Asish K. Mukhopadhyay,Bansibadan Maji
Peptide Neurotoxins Targeting Voltage-Gated Ion Channels and Their Therapeutic Implications
Ebook: Frontiers in Clinical Drug Research- Central Nervous System
Volume: 1 Year: 2013
Author(s): Seungkyu Lee,Sun W. Hwang
Doi: 10.2174/9781608057795113010007
Voltage-Gated Calcium Channels as Targets for the Treatment of Chronic Pain
Journal: Current Drug Targets - CNS & Neurological Disorders
Volume: 3 Issue: 6 Year: 2004 Page: 457-478
Author(s): Joseph G. McGivern, Stefan I. McDonough
An Analytical Drain Current Model for Dual-material Gate Graded - channel and Dual-oxide Thickness Cylindrical Gate (DMG-GC-DOT) MOSFET
Journal: Nanoscience & Nanotechnology-Asia
Volume: 9 Issue: 2 Year: 2019 Page: 291-297
Author(s): Hind Jaafar,Abdellah Aouaj,Ahmed Bouziane,Benjamin Iñiguez
Analytical Modeling of D.C. Parameters of Double Gate Junctionless MOSFET in Near and Subthreshold Regime for RF Circuit Application
Journal: Nanoscience & Nanotechnology-Asia
Volume: 10 Issue: 4 Year: 2020 Page: 457-470
Author(s): Dipanjan Sen,Savio J. Sengupta,Swarnil Roy,Manash Chanda,Subir K. Sarkar
Analysis and Effects of Voids in Cylindrical Surrounding Double- Gate MOSFET for the RF Switches
Journal: Nanoscience & Nanotechnology-Asia
Volume: 7 Issue: 2 Year: 2017 Page: 243-251
Author(s): Viranjay M. Srivastava
Characterization of AlInN/GaN based HEMT for Radio FrequencyApplications
Journal: Micro and Nanosystems
Volume: 15 Issue: 1 Year: 2023 Page: 55-64
Author(s):