Search Result "ambipolar current"


Research Article

Impact of Drain Underlap Length Variation on the DC and RF Performance of Cylindrical Gate Tunnel FET

Journal: Nanoscience & Nanotechnology-Asia
Volume: 11 Issue: 1 Year: 2021 Page: 97-103
Author(s): Sidhartha Dash,Guru P. Mishra

General Research Article

Dual Metal Triple-Gate-Dielectric (DM_TGD) Tunnel Field Effect Transistor: A Novel Structure for Future Energy Efficient Device

Journal: Recent Advances in Electrical & Electronic Engineering
Volume: 14 Issue: 6 Year: 2021 Page: 683-693
Author(s): Ajay Kumar Singh,Tan Chun Fui

Electron Spin Resonance Spectroscopy of Single- Walled Carbon-Nanotube Thin-Films and their Transistors

Ebook: Frontiers in Magnetic Resonance
Volume: 1 Year: 2018
Author(s): Kazuhiro Marumoto
Doi: 10.2174/9781681086934118010009

Research Article

Design and Analyze the Effect of Hetero Material and Dielectric on TFETwith Dual Work Function Engineering

Journal: Nanoscience & Nanotechnology-Asia
Volume: 14 Issue: 1 Year: 2024 Page: 30-39
Author(s):

Research Article

Impact of Gaussian Traps on the Characteristics of L-shaped TunnelField-effect Transistor

Journal: Micro and Nanosystems
Volume: 15 Issue: 4 Year: 2023 Page: 269-275
Author(s):

Bone Regeneration and Bone Growth Using Perovskites

Ebook: Biomedical Applications of Perovskites: The Era of Bio-Piezoelectric Systems
Volume: 1 Year: 2024
Author(s): K. Kumar Ebenezar
Doi: 10.2174/9789815256383124010011

General Research Article

Design and Performance Analysis of Low Sub-threshold Swing p-ChannelCylindrical Thin-film Transistors

Journal: Micro and Nanosystems
Volume: 15 Issue: 1 Year: 2023 Page: 65-74
Author(s): Viswanath G. Akkili,Viranjay M. Srivastava

Current Status of Inorganic Solar Cells Using Quantum Structures

Journal: Recent Patents on Nanotechnology
Volume: 6 Issue: 1 Year: 2012 Page: 2-9
Author(s): Seung Yeop Myong

Device Structure Modifications in Conventional Tunnel Field Effect Transistor (TFET) for Low-power Applications

Ebook: Nanoelectronics Devices: Design, Materials, and Applications (Part I)
Volume: 1 Year: 2023
Author(s):
Doi: 10.2174/9789815136623123010008

SiGe Source-Based Epitaxial Layer-Encapsulated TFET and its Application as a Resistive Load Inverter

Ebook: Nanoelectronic Devices and Applications
Volume: 1 Year: 2024
Author(s): Radhe Gobinda Debnath
Doi: 10.2174/9789815238242124010013

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