Search Result "Subthreshold Swing"
Analytical Modeling of D.C. Parameters of Double Gate Junctionless MOSFET in Near and Subthreshold Regime for RF Circuit Application
Journal: Nanoscience & Nanotechnology-Asia
Volume: 10 Issue: 4 Year: 2020 Page: 457-470
Author(s): Dipanjan Sen,Savio J. Sengupta,Swarnil Roy,Manash Chanda,Subir K. Sarkar
InAs Raised Buried Oxide SOI-TFET with N-type Si1-xGex Pocket for Low-Power Applications
Ebook: Nanoelectronic Devices and Applications
Volume: 1 Year: 2024
Author(s): Ashish Kumar Singh
Doi: 10.2174/9789815238242124010012
Performance Analysis of SOI-Tunnel FET with AlxGa1-xAs ChannelMaterial
Journal: Micro and Nanosystems
Volume: 15 Issue: 3 Year: 2023 Page: 185-188
Author(s): Sanjeet Kumar Sinha
Device Structure Modifications in Conventional Tunnel Field Effect Transistor (TFET) for Low-power Applications
Ebook: Nanoelectronics Devices: Design, Materials, and Applications (Part I)
Volume: 1 Year: 2023
Author(s):
Doi: 10.2174/9789815136623123010008
SiGe Source-Based Epitaxial Layer-Encapsulated TFET and its Application as a Resistive Load Inverter
Ebook: Nanoelectronic Devices and Applications
Volume: 1 Year: 2024
Author(s): Radhe Gobinda Debnath
Doi: 10.2174/9789815238242124010013
An Analytical Drain Current Model for Dual-material Gate Graded - channel and Dual-oxide Thickness Cylindrical Gate (DMG-GC-DOT) MOSFET
Journal: Nanoscience & Nanotechnology-Asia
Volume: 9 Issue: 2 Year: 2019 Page: 291-297
Author(s): Hind Jaafar,Abdellah Aouaj,Ahmed Bouziane,Benjamin Iñiguez
Transition from Conventional FETs to Novel FETs, SOI, Double Gate, Triple Gate, and GAA FETS
Ebook: Nanoscale Field Effect Transistors: Emerging Applications
Volume: 1 Year: 2023
Author(s):
Doi: 10.2174/9789815165647123010005
An Accurate Drain Current Model for Symmetric Dual Gate Tunnel FET Using Effective Tunneling Length
Journal: Nanoscience & Nanotechnology-Asia
Volume: 9 Issue: 1 Year: 2019 Page: 85-91
Author(s): Sasmita Sahoo,Sidhartha Dash,Guru P. Mishra
Comparative Study of L-shaped and U-shaped TFET Device with TemperatureVariations
Journal: Nanoscience & Nanotechnology-Asia
Volume: 12 Issue: 3 Year: 2022 Page: 34-38
Author(s):
FinFET Advancements and Challenges: A State-of-the-Art Review
Ebook: Nanoelectronics Devices: Design, Materials, and Applications (Part I)
Volume: 1 Year: 2023
Author(s):
Doi: 10.2174/9789815136623123010011