Search Result "effective gate length"
An Accurate Drain Current Model for Symmetric Dual Gate Tunnel FET Using Effective Tunneling Length
Journal: Nanoscience & Nanotechnology-Asia
Volume: 9 Issue: 1 Year: 2019 Page: 85-91
Author(s): Sasmita Sahoo,Sidhartha Dash,Guru P. Mishra
Impact of Drain Underlap Length Variation on the DC and RF Performance of Cylindrical Gate Tunnel FET
Journal: Nanoscience & Nanotechnology-Asia
Volume: 11 Issue: 1 Year: 2021 Page: 97-103
Author(s): Sidhartha Dash,Guru P. Mishra
Assessment of Quantum Scaling Length Model for Cylindrical Surrounding Double-Gate (CSDG) MOSFET
Journal: Micro and Nanosystems
Volume: 13 Issue: 4 Year: 2021 Page: 467-472
Author(s): Uchechukwu A. Maduagwu,Viranjay M. Srivastava
Performance Analysis of Gate Engineered High-K Gate Oxide Stack SOIFin-FET for 5 nm Technology
Journal: Nanoscience & Nanotechnology-Asia
Volume: 13 Issue: 1 Year: 2023 Page: 2-8
Author(s):
Analytical Modeling of Threshold Voltage and Drain-Induced-Barrier- Lowering Variations Due to Gate Length Fluctuation in Nanometer MOSFETs
Journal: Recent Advances in Electrical & Electronic Engineering
Volume: 10 Issue: 2 Year: 2017 Page: 128-133
Author(s): Lu Weifeng,Wang Guangyi,Lin Mi,Sun Lingling
The Double-Gate SOI MOSFET Model
Ebook: Bipolar Transistor and MOSFET Device Models
Volume: 1 Year: 2016
Author(s): Kunihiro Suzuki
Doi: 10.2174/9781681082615116010012
The Single-Gate SOI MOSFET Model
Ebook: Bipolar Transistor and MOSFET Device Models
Volume: 1 Year: 2016
Author(s): Kunihiro Suzuki
Doi: 10.2174/9781681082615116010011
An Extensive Simulation Study of Gate Underlap Influence on Device Performance of Surrounding Gate In0.53Ga0.47As/InP Hetero Field Effect Transistor
Journal: Nanoscience & Nanotechnology-Asia
Volume: 10 Issue: 2 Year: 2020 Page: 157-165
Author(s): Soumya S. Mohanty,Urmila Bhanja,Guru P. Mishra
Regulation and Effect of Telomerase and Telomeric Length in Stem Cells
Journal: Current Stem Cell Research & Therapy
Volume: 16 Issue: 7 Year: 2021 Page: 809-823
Author(s): Basak Celtikci,Gulnihal Kulaksiz Erkmen,Zeliha Gunnur Dikmen
Impact of Electrode Length on I-V Characteristics to Linearity of TFET With Source Pocket
Ebook: Nanoelectronics Devices: Design, Materials, and Applications (Part I)
Volume: 1 Year: 2023
Author(s):
Doi: 10.2174/9789815136623123010009