Abstract
Single-gate SOI MOSFET has been proposed to alleviate scaling limit of bulk MOSFETs. We show an analytical model for threshold voltage for the device considering two-dimensional effects in both SOI and buried oxide layers. The model explains the dependence of short channel effects on the device parameters of channel-doping concentration, gate oxide, SOI, and buried oxide thicknesses, which agree well with numerical data.
Keywords: Characteristic length, Fully-depleted, Gate length, Poisson equation, Scaling theory, Short channel effects, Short channel immunity, SOI, Subthreshold swing, Surface potential, Threshold voltage.
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