Metal Oxide Field Effect Transistor (MOSFET)

More or less than 17 years since D. Kahng and M. M. Atalla first conveyed the demonstration of a Si-SiO2 MOS transistor (MOSFET). In our regular lives, the impression of these MOS-based IC’s was imparted -just beginning to be felt. This incredible explosion has been caused by many inventions and countless numbers of perhaps small but crucial contributions by many researchers. Historical signs of progress of the metal-oxide-semiconductor field-effect transistor (MOSFET) during the last 60 years are appraised, from the 1928 patent disclosures of the field-effect conductivity modulation concept and the semiconductor triodes structures proposed by Lilienfeld to the 1947 Shockley-originated efforts which controlled to the laboratory demonstration of the modern silicon MOSFET 30 years later in 1960. A review is then made of the mileposts of the past 30 years leading to the latest submicron silicon logic CMOS (Complementary MOS and BICMOS (Combination of Bipolar-junction-Transistor and CMOS) arrays and the three-dimensional and ferroelectric extensions of Dennard‘s one-transistor dynamic random access memory (DRAM) cell. This chapter discusses the fabrication of MOSFET and its principal operations based on the concept of metal-oxide-semiconductor technology. Further, the discussion is focused on the details mathematical modeling of MOS capacitors, device characteristics, and the process of channel length modulation and its application. The conversation is continuing on the concept of CMOS technology and its combination with the transistor – the BiCMOS technology.