Abstract
In this chapter, fundamentals of the p – n junction, electric field across the
junction, equilibrium carrier concentration on each side, etc., have been briefly
discussed. Expression of built-in potential in terms of carrier density has been derived.
Magnitudes of the current under zero, forward, and reverse biased conditions have
been calculated. Unlike a resistor, p – n junction corresponds to static, dynamic and
average ac resistance, and they have been briefly discussed here along with protocol
to examine their values. These p – n junctions also exhibit capacitance, namely
transition capacitance and diffusion capacitance. Herein, these parameters and their
relevance in current-voltage characteristics of p – n junction and applicational aspects
have been elaborated.
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