In(Ga)N Nanowire Heterostructures and Optoelectronic Device Applications

Title: In(Ga)N Nanowire Heterostructures and Optoelectronic Device Applications

Volume: 1 Issue: 2

Author(s): Saeed Fathololoumi, Hieu P. T. Nguyen and Zetian Mi

Affiliation:

Keywords: III-nitride nanowires, nanowire growth, light emitting diodes, optoelectronics, solid state lighting, nanotechnology, conductivity, nanowires, photodetectors, InGaN

Abstract: Significant developments have been made in III-nitride compound semiconductor nanowire heterostructures. This paper provides an overview on the recent progress of III-nitride nanowire heterostructures and their emerging device applications. The growth mechanisms of III-nitride nanowires are first described, followed by a review of the structural, electrical, and optical properties of In(Ga)N nanowires. The use of III-nitride nanowires to realize functional photonic devices, including light emitting diodes, lasers, solar cells, and sensors are also briefly described, with special attention paid to the emerging nanowire LEDs for applications in solid state lighting.

Cite this article as:

Fathololoumi Saeed, P. T. Nguyen Hieu and Mi Zetian, In(Ga)N Nanowire Heterostructures and Optoelectronic Device Applications, Nanoscience & Nanotechnology-Asia 2011; 1 (2) . https://dx.doi.org/10.2174/2210681211101020123