Abstract
Short channel MOSFET model was presented. The difficulty for the model exists in that depletion width changes along the channel. A universal channel depletion width parameter was proposed, which effectively expresses the channel depletion width variation for various device parameters and bias conditions. Using this parameter, a two-dimensional potential distribution was solved and a corresponding threshold voltage model was derived, which reproduces the numerical data of sub-0.1-m gate length devices. We further extend the model to non-uniform channel doping devices of epi-MOSFETs.
Keywords: Channel doping, Charge sharing, Epi-MOSFET, Gate length, Junction depth, Punch through, Scaling theory, Short channel effects, Short channel immunity, Surface potential, Threshold voltage, Universal channel depletion width.
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