Abstract
Oxidation model is derived by considering diffusion fluxes in gas phase atmosphere, growing oxide layer, and reaction of oxidant and substrate Si atoms at SiO2/Si interface. This model gives simple time dependence of growing SiO2 layer thickness. The impurities in the Si substrate redistribute during the oxidation. We treat the redistributed profile as moving boundary one, and derive the corresponding model. The model well predicts B depletion at the SiO2/Si interface.
Keywords: Oxidation, segregation, SiO2, VLSI, MOS, chemical reaction, redistribution, surface, mass-transfer constant, Henry’s law, ideal gas law, SiO2/Si interface, linear dependence, parabolic dependence, Massoud model.
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