Amorphous Layer Thickness

Abstract

A parameter of thorough dose, Φ_a/c is introduced to express continuous amorphous layer thickness. Φ_a/c is defined by the dose of ions that pass through the amorphous/crystal interface, and the thickness of amorphous layer d_a is expressed by Φ_a/c combined with parameters for ion implantation profiles. Φ_a/c is independent of ion implantation conditions but depends on impurities. Φ_a/c for Ge, Si, As, P, B, In, and Sb were evaluated. Consequently, we can predict d_a over wide ion implantation conditions.

Keywords: Ion implantation, amorphous, solid phase epitaxy, tilt, through dose, damage, shallow junction, annealing, activation, sheet resistance, residual defects, substrate temperature, displacement energy, transferred energy, amorphous/crystal interface, cross section, pocket ion implantation.