Abstract
Various impurities are used in VLSI processes. The key factors for the selection of the impurities are their solid solubility and diffusion coefficient. B, As, P are commonly used as doping impurities due to their high solid solubility. In and Sb are sometimes used to realize shallow junctions due to their low diffusion coefficients. We briefly showwhere various impurities are used in two distinguished devices of bipolar transistors and MOS FET’s.
Keywords: Solid solubility, diffusioncoefficient, boron, arsenic, phosphorous, antimony, indium, bipolar, MOS, emitter, base, collector, source, drain, gate, extension, pocket.
About this chapter
Cite this chapter as:
Kunihiro Suzuki ;Selection of Impurities, Ion Implantation and Activation (2013) 1: 3. https://doi.org/10.2174/9781608057818113010004
DOI https://doi.org/10.2174/9781608057818113010004 |
Print ISSN 2589-2940 |
Publisher Name Bentham Science Publisher |
Online ISSN 2215-0005 |