Abstract
Strain measurement based on reflection of polarized light from the strained semiconductor sample is explained in this chapter. Spectroscopic ellipsometry is usually applied for thickness measurement of thin films of materials with known optical functions. In this approach, the optical functions are found with the layer thickness determined from additional separate measurements. From the fitted optical function spectra, the shift in energy of the critical point can be determined mathematically and using the deformation potential, the strain can be obtained.
Keywords: Spectroscopic ellipsometry, Piezo-optical effect, Parametric semiconductor model, Deformation potential, Virtual substrate.
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