Nanoelectronic Devices and Applications

2D Material Tungsten Diselenide (WSe2 ): Its Properties, Applications, and Challenges

Author(s): Vydha Pradeep Kumar and Deepak Kumar Panda * .

Pp: 271-296 (26)

DOI: 10.2174/9789815238242124010017

* (Excluding Mailing and Handling)

Abstract

In this chapter, we study the characteristics of the 2-dimensional material Tungsten Diselenide (WSe2 ), along with its properties, applications, and challenges. Here, we present in detail the evaluation of TMDC materials and other 2D materials available in comparison to WSe2 materials. We also differentiate these materials based on their qualities, characteristics, advantages, and applications in detail. Later, we discuss the designed device structure of the WSe2FET along with its simulation results. Simulation analysis describes the input and output characteristics of a transistor with WSe2 as channel material and compares its response with the conventional MOSFET. Thereafter, we discuss the hetero-dielectric structure performance with different high-K values, and then a dielectric-modulated biosensor device is designed to study its characteristics and sensitivity. It is observed from the analysis that hetero-dielectric structure devices have a high Ion/Ioff current ratio compared to conventional MOSFET due to high interface layers interaction and high gate controlling capability. Finally, we study the sensitivity behavior of the device and understand that as the K-value rises, the device sensitivity increases because of the high electrostatic property in nature. WSe2 has a larger surface-to-volume ratio, which provides a larger sensing area for interactions with biomolecules, potentially enhancing the sensitivity of the biosensor.

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