Abstract
Effect of external electric field on formation of stressed interfaces in heterostructures grown by molecular beam epitaxy is considered. Ion implantation technology and mechanically induced deformations are appeared to be effective tools applied to manufacture semiconductor-based active elements. Indentation seems to be an important instrument for preparing barrier structures with unique charge carriers transport properties. Ion implantation technique makes it possible to form additional junctions in the implanted crystal matrix which are very important for the increase of efficiency of conventional solar cells.
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