Abstract
Charge transport mechanisms and photosensitivity of amorhous silicon thin films prepared by magnetron sputtering are investigated at room temperature. The power law and the power-exponential laws governing the currents observed experimentally are revealed. The near-IR photosensitivity of the films can be sufficiently improved by means of high-temperature hydrogenation. Important properties of heterostructures based on PbS, ZnSe, ZnTe and CdTe semiconductors are also discussed along with the results of numerical analysis of experimental data.
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