An Active CNTFET Model for RF Characterization Deduced from S Parameters Measurements

Title:An Active CNTFET Model for RF Characterization Deduced from S Parameters Measurements

Volume: 11 Issue: 1

Author(s): Roberto Marani, Gennaro Gelao, Pasquale Soldano and Anna Gina Perri

Affiliation:

Keywords: Carbon nanotube field effect transistors (CNTFETs), nanoelectronic devices, nanotechnology, modelling, RF characterization, S parameters measurements.

Abstract: In this paper a procedure for RF characterization of Carbon NanoTube Field Effect Transistors is illustrated and applied to a back-gate CNTFET. S parameters measurements up to 12 GHz are performed and a new lumped element active two-port network is proposed and deduced from these measurements. To obtain the intrinsic RF behavior of the device, we perform a straightforward static de-embedding procedure, applicable to any other CNTFET structures. In this way it is possible to evaluate the intrinsic model to implement directly in simulation software for electronic circuits CAD.

Cite this article as:

Marani Roberto, Gelao Gennaro, Soldano Pasquale and Perri Gina Anna, An Active CNTFET Model for RF Characterization Deduced from S Parameters Measurements, Current Nanoscience 2015; 11 (1) . https://dx.doi.org/10.2174/1573413710666140909203046