Abstract
Background: This paper presents a model for sputtering heterogeneous two-component materials with light ions.
Method: The model, based on two sputtering mechanisms, makes it possible to calculate the total sputtering coefficients of the target components, and it is easily transformed for the case of sputtering different types of targets. Model testing was conducted for the case of sputtering homogeneous tungsten carbide targets with ions of different energies.
Results: The results of the calculations are given in comparison with experimental data and the results of computer simulation. The comparison shows good agreement of the calculated values with the data of other authors. The proposed model was used to describe stationary (stoichiometric) sputtering of tungsten carbide targets. Using this model, the concentrations of components in the modified target layer were calculated, and the thickness of the modified layer was also estimated.
Conclusion: The method of calculating the concentration of target components in the modified layer and the thickness of this layer can be the basis of the technology of creating materials with given properties of the surface layer.
