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Nanoscience & Nanotechnology-Asia

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ISSN (Print): 2210-6812
ISSN (Online): 2210-6820

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Research Article

Comparative Study of L-shaped and U-shaped TFET Device with Temperature Variations

Author(s): Sweta Chander and Sanjeet Kumar Sinha*

Volume 12, Issue 3, 2022

Published on: 22 June, 2022

Article ID: e280422204204 Pages: 5

DOI: 10.2174/2210681212666220428120240

Price: $65

Abstract

Background: In the nanometer regime, the impact of temperature is quite dominant in the device characteristics.

Objectives: A comparative study of L-shaped Tunnel Field Effect Transistors (TFETs) and Ushaped TFETs with temperature variation.

Methods: The effect of temperature has been studied for the device characteristics in terms of surface potential, electric field, and transfer characteristics using the Synopsys TCAD tool.

Results: The ON current and OFF current of L-shaped and U-shaped TFETs structure shows the enhanced performance due to the large area of channel length. The addition of n-type pocket under the source enhances both devices ON current and OFF current. Both L-shaped and U-shaped TFETs structures are easy to fabricate and cost-effective due to the use of already established Si technology.

Conclusion: In next-generation devices, the superior performance of L and U-shaped TFETs structure makes it a promising contender for low power applications as their subthreshold swing (SS) is less than 60 mV/decade is observed.

Keywords: Temperature, tunnel field effect transistor, L-shaped, U-shaped, channel length, ON current.

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