Physics and Technology of Semiconductor Thin Film-Based Active Elements and Devices

Principal theoretical models of nonideal semiconductor heterostructures as well as their applications for describing experimental data are presented. Main electrophysical characteristics (current-voltage and capacitance-voltage) of real heterojunctions based on A2B6-A4B6 materials and nanoheterostructures Si/CNT are interpreted in the framework of these models.

Principal technologies used for heterostructures growth are described: molecular beam epitaxy (MBE), metalorganic chemical vapor deposition (MOCVD), atomic layer deposition (ALD). The main tools for characterization of the structures obtained are presented along with recent experimental data on the most important structural and electrical properties of the heterostructures based on III-V and II-VI semiconductor materials.

Charge transport mechanisms and photosensitivity of amorhous silicon thin films prepared by magnetron sputtering are investigated at room temperature. The power law and the power-exponential laws governing the currents observed experimentally are revealed. The near-IR photosensitivity of the films can be sufficiently improved by means of high-temperature hydrogenation. Important properties of heterostructures based on PbS, ZnSe, ZnTe and CdTe semiconductors are also discussed along with the results of numerical analysis of experimental data.

Effect of external electric field on formation of stressed interfaces in heterostructures grown by molecular beam epitaxy is considered. Ion implantation technology and mechanically induced deformations are appeared to be effective tools applied to manufacture semiconductor-based active elements. Indentation seems to be an important instrument for preparing barrier structures with unique charge carriers transport properties. Ion implantation technique makes it possible to form additional junctions in the implanted crystal matrix which are very important for the increase of efficiency of conventional solar cells.

Preparation and main electrophysical characteristics of narrow-gap semiconductor ZnCdHgTe thin films are described. Experimental room-temperature current-voltage and capacitance-voltage dependences are presented. Energy band diagram construction procedure and results of the numerical simulation of experimental data are also discussed.

Charge transport mechanisms and photosensitivity of ZnCdHgTe thin films manufactured by liquid-phase epitaxy and laser technology are investigated at room temperature. Laser beam-induced formation of barrier structures is also considered. Effect of hydrogenation as a tool for enhancing device properties of the films is described.

Chalcogenide semiconductors A1B5C6 are perspective materials for various sensor applications. The chapter summarizes unique experimental results on electrical properties of Ag3SbS3 monocrystals and provides necessary data for manufacture of γ-radiation sensors based on these materials.

Preparation and main electrophysical characteristics of A1B5C6 nanostructural semiconductor materials are discussed. Sensor devices designed for external electric field detection and operation in aggressive environments are described. Numerical simulation of the main electrical characteristics of these structures is also reported.

This chapter describes novel applications of composite semiconductors for spintronics and new materials for nanoscale sensors.

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