Abstract
Ion implanted impurity also plays a role for sputtering substrate atoms. The profiles are influenced by the sputtering. The database for the sputtering has also been developed. We described a model for the profiles where sputtering phenomenon is included. The model predicts the profile becomes invariable when the dose exceeds a certain value.
Keywords: Sputtering, dose loss, backscattering, dose, sublimation energy, reduced energy, nuclear stopping power, electron stopping power, Gaussian profile, surface, B, P, As, Si.
About this chapter
Cite this chapter as:
Kunihiro Suzuki ;Dose Loss, Ion Implantation and Activation (2013) 2: 69. https://doi.org/10.2174/9781608057900113020007
DOI https://doi.org/10.2174/9781608057900113020007 |
Print ISSN 2589-2940 |
Publisher Name Bentham Science Publisher |
Online ISSN 2215-0005 |