Abstract
It is important to predict ion implanted profiles in substrates comprised of different materials, where related moment parameters are different. We describe two procedures to generate profiles in multi-layers by using data for each layer, that is, dose matching method, and Rp normalized method, where Rp is the projected range. We show the process in which the methods are applied to multi-layers. Dose matching method is a simple and effective method. However, it provides unstable results sometimes, while Rp normalized method provides stable results.
Keywords: Ion implantation, multi-layer, dose, dose matching method, Rp normalized method, projected range, straggling, profile, effective thickness, Monte Carlo, P, W, Si, SiO2, channeling.
About this chapter
Cite this chapter as:
Kunihiro Suzuki ;Ion Implantation Profile in Multi-Layer Structure, Ion Implantation and Activation (2013) 2: 54. https://doi.org/10.2174/9781608057900113020006
DOI https://doi.org/10.2174/9781608057900113020006 |
Print ISSN 2589-2940 |
Publisher Name Bentham Science Publisher |
Online ISSN 2215-0005 |