Abstract
Some general remarks are given for all the strain characterization methods discussed in previous chapters. The methods can be categorized into those where a strain related material property must be known and those that do not require such a priori knowledge. The different available methods are briefly compared with each other in terms of the strain resolution, spatial resolution, throughput and accessibility. The future application of semiconductor strain characterization techniques in electrical energy storage devices is suggested and a recent development of strain characterization by electron backscattering from epitaxial layers is highlighted.
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