Abstract
The use of inelastic scattering of laser light or Raman scattering to measure strain with micron scale spatial resolution is reviewed in this chapter. The principle of Raman scattering is discussed first and is followed by the effect of strain on the frequency shift of Raman scattered light. The experimental setup for performing Raman scattering measurements and the needed experimental precautions are given in detail. The method is illustrated by examples from strained silicon, polycrystalline silicon and strain fields near device isolation structures in crystalline silicon.
Keywords: Phonons, Inelastic scattering, Raman shift, Wavenumber, Polysilicon.
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