Abstract
Two conventional strain measurement methods, namely the strain gauge and the Moire technique are first discussed. The origin of interest in strain effects in semiconductors is introduced in a chronological sequence beginning with stressed induced defects near isolation structures and the present intentional use of strain in the channel of field effect transistors as a performance booster. The need and the lack of precise strain measurement methods at the submicron and nanoscale are emphasized. Strain measurement for microelectromechanical device materials is also discussed.
Keywords: Strain metrology, Nanoelectronics, Strained silicon, Microelectromechanical systems.
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