Abstract
Gallium Oxide (Ga2O3
) is an emerging semiconductor material that has
gained significant attention in the field of electronics due to its unique properties and
potential applications. Gallium Oxide has a very large bandgap of around 4.8-4.9 eV;
this wide bandgap allows gallium oxide to withstand higher breakdown voltages and is
well-suited for high-power switches, high-voltage rectifiers and inverters. Gallium
oxide-based power electronics can operate at higher voltages and temperatures,
enabling efficient energy conversion and reducing losses. In this book, we have
discussed the physical properties, growth, and deposition methods along with the
various applications of Gallium Oxide. We have even simulated a Gallium Oxide
FINFET and discussed its electrical parameter’s behavior and various RFIC parameters
for different fin widths.