Abstract
In this chapter, studies of the DC characteristics of AlGaN/GaN HEMT
(High Electron Mobility Transistor) and its compact model are presented. It includes
the working principles of different HEMT models, their advantages, and their use in
high-frequency and high-power applications. The chapter provides a distinct idea about
the properties of different models (EE, ASM, and MVGS) and their DC characteristics,
which are generated by the Advanced Design System (ADS). The performance analysis
of the proposed HEMT models in terms of high electron mobility, high-power and
high-frequency operation, low noise amplification, and high thermal stability, along
with challenges and future scopes, is discussed in this chapter.
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