Abstract
This study examines the effect of device parameters on the transient and steady-state dynamics. In addition, the device's analogue modulation properties are thoroughly examined. Under various cold finger temperature circumstances, the parameters terminal voltage (V), spontaneous emission factor (SEF), number of stages (M), and mirror reflectivity (R) are modified to see how they affect device properties. To analyze modulation properties, such as bandwidth, maximum modulation depth and corresponding frequency, the device is operated by the haversine input current. According to the findings, the lasing activity is delayed when the cold finger temperature rises, thereby increasing the threshold current regardless of device parameter modification. When T=45K and 0.65A current are used, a maximum Modulation Depth (MD) of 18% is produced. The greatest bandwidth of 27GHz is obtained when the injected current is 1.05A at T=15K. The minimal frequency required to obtain maximal MD rises as current and cold finger temperatures rise.