Abstract
In this paper we have explored the design of double-pole four-throw (DP4T) RF CMOS switch at 45-nm technology and analyzed the better drain current and switching speed as compared to the existing single-pole double-throw (SPDT) switch and double-pole double-throw (DPDT) switch. For the proposed DP4T RF CMOS switch results the peak output currents around 0.387 mA and switching speed of 36 ps. We are using the CMOS inverter propertied to some extent to design this DP4T switch. This article deals with the evolution of RF switches and its design through reviewing available patents and introduces the latest applications of proposed switch.
Keywords: DP4T switch, RF CMOS switch, single-gate MOSEFT, VLSI
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