Login Register Cart 0
Generic placeholder image

Current Applied Materials

Editor-in-Chief

ISSN (Print): 2666-7312
ISSN (Online): 2666-7339

Back
Journal Home About Journal Editorial Board Current Issue Volumes/Issues
Subscribe
Research Article

Electromotive Force of Spontaneously Polarized Semiconductors

Author(s): Vladimir F. Kharlamov*

Volume 2, 2023

Published on: 27 September, 2023

Article ID: e130923221015 Pages: 5

DOI: 10.2174/2666731202666230913105958

Price: $65

conference banner
Abstract

Background: Spontaneously polarized finely dispersed semiconductors can be sources of direct electric current, similar to thermoelectric converters. Their power is low due to the low electrical conductivity of the powders.

Objective: Theoretical description of the electromotive force of a spontaneously polarized homogeneous semiconductor film with ionized donor centers uniformly distributed over its two surfaces and free electrons in the volume. Establishment of technical characteristics and competitive advantages of using a film as a current source converts the received energy (heat or light) into the work of an electric field.

Methods: The theory of semiconductors and the laws of thermodynamics are used.

Results: Analytical expressions are obtained that describe the electronic processes in a metalsemiconductor- metal three-layer film and the technical characteristics of its use as a current source. Estimates are given on the example of a silicon film with arsenic-doped surfaces.

Conclusion: The universal principles for creating homogeneous solids of macroscopic dimensions are substantiated, with the efficiency of converting heat into the work of an electric field, which is significantly (by an order of magnitude) higher than the efficiency of materials used to create thermo-EMF sources. The heat absorbed by the metal-semiconductor-metal three-layer film serves as an energy source for a direct current in a closed circuit generated by this structure with an efficiency of 100%. The power of the current source 10 - 105 W/m2 depends on the received heat flow. A semiconductor film with a built-in electric field is an analogue of a p - n junction and does not have its drawbacks.

[1]
Bartkowska JA, Bochenek D. Microstructure and dielectric properties of BF–PFN ceramics with negative dielectric loss. J Mater Sci Mater Electron 2018; 29(20): 17262-8.
[http://dx.doi.org/10.1007/s10854-018-9820-7]
[2]
Yan H, Zhao C, Wang K, Deng L, Ma M, Xu G. Negative dielectric constant manifested by static electricity. Appl Phys Lett 2013; 102(6): 062904.
[http://dx.doi.org/10.1063/1.4792064]
[3]
Wang Z, Sun K, Tian J, et al. Weakly negative permittivity with an extremely low plasma frequency in polyvinyl alcohol/graphene membranous metacomposites. J Mater Sci Mater Electron 2021; 32(18): 23081-9.
[http://dx.doi.org/10.1007/s10854-021-06791-9]
[4]
Sokolov AA, Sergeev VO, Kharlamov VF. Spontaneous polarization of hydrogen-saturated composite materials. Russ Phys J 2017; 59(9): 1460-5.
[http://dx.doi.org/10.1007/s11182-017-0931-z]
[5]
Kharlamov VF. Electromotive force in a layer of finely dispersed spontaneously polarized semiconductor. J Surf Invest X-ray, Synchrotron Neutron Tech 2018; 12(6): 1233-6.
[http://dx.doi.org/10.1134/S1027451018050592]
[6]
Rogov AP, Kharlamov VF. Nano- and microstructures with equal zero ohmic losses in a spontaneously polarized state. Nanotechnol Russ 2019; 14(5-6): 197-203.
[http://dx.doi.org/10.1134/S1995078019030108]
[7]
Kharlamov VF. Substances with zero static permittivity. Sci Rep 2022; 12(1): 7424.
[http://dx.doi.org/10.1038/s41598-022-11454-8] [PMID: 35523851]
[8]
Bazelyan EM, Raizer YuP. Lightning Physics and Lightning Protection. Bristol, Philadelphia: IOP Publishing 2000.
[http://dx.doi.org/10.1887/0750304774]
[9]
Rakov VA, Uman MA. Lightning: Physics and Effects 2003.
[http://dx.doi.org/10.1017/CBO9781107340886]
[10]
Dwyer JR, Uman MA. The physics of lightning. Phys Rep 2014; 534(4): 147-241.
[http://dx.doi.org/10.1016/j.physrep.2013.09.004]
[11]
Cen J, Yuan P, Xue S. Observation of the optical and spectral characteristics of ball lightning. Phys Rev Lett 2014; 112(3): 035001.
[http://dx.doi.org/10.1103/PhysRevLett.112.035001] [PMID: 24484145]
[12]
Collacicco G. Electrical potential of the water surface. Chem Scr 1988; 28(2): 141-4.
[13]
Kirzhnits DA. Are the Kramers-Kronig relations for the dielectric permittivity of a material always valid? Sov Phys Usp 1976; 19(6): 530-7.
[http://dx.doi.org/10.1070/PU1976v019n06ABEH005268]
[14]
Ginzburg VL. The Problem of High-Temperature Superconductivity. Annu Rev Mater Sci 1972; 2(1): 663-96.
[http://dx.doi.org/10.1146/annurev.ms.02.080172.003311]
[15]
Maksimov EG, Dolgov OV. A note on the possible mechanisms of high-temperature superconductivity. Phys Uspekhi 2007; 50(9): 933-7.
[http://dx.doi.org/10.1070/PU2007v050n09ABEH006213]
[16]
Bazarov IP. Thermodynamics. Moscow: Vysshaya Shkola 1991.
[17]
Bonch-Bruevich VL, Kalashnikov SG. Physics of Semiconductors. Berlin: VEB 1982.

Rights & Permissions Print Cite
© 2024 Bentham Science Publishers | Privacy Policy