Abstract
Background: We have studied the Coulomb drag phenomena for hole-hole static potentials theoretically and measured numerically using the random phase approximation (RPA) method.
Objective: The drag resistivity is evaluated at low temperature, large interlayer separation limit and weakly screening regime, with the geometry of two atomically thin materials, such as BLG/GaAsbased multilayer system, which is a promising system in nanomaterials and technology.
Methods: Static local field corrections (LFC) are considered to take into account the Exchangecorrelations (XC) and mutual interaction effects with varying concentrations of the active and passive layer.
Results: It has been found that the drag resistivity gets enhanced on using the LFC effects and increases on increasing the effective mass. In Fermi-Liquid regime, drag resistivity is directly proportional to T2, n-3, d-4 and ε2 with respect to temperature (T), density (n), interlayer separation (d~nm) and dielectric constant (ε2), respectively.
Conclusion: Dependency of drag resistivity is measured and compared to 2D e-e and e-h coupledlayer systems with and without the effect of non-homogeneous dielectric medium.
Keywords: Drag resistivity, weak interaction, low temperature, hole-hole, static interactions, LFC.
Graphical Abstract
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