Search Result "gate capacitance Si-Ge"
Inversion Charge Quantization Model for Double Gate Mosfets
Journal: Nanoscience & Nanotechnology-Asia
Volume: 8 Issue: 0 Year: 2018 Page: 1-10
Author(s): Vimala P,Nithin Kumar N.R
A Study on Sensitivity of Some Switching Parameters of JLT to Structural Parameters
Journal: Nanoscience & Nanotechnology-Asia
Volume: 10 Issue: 4 Year: 2020 Page: 433-446
Author(s): Subhro Ghosal,Madhabi Ganguly,Debarati Ghosh
Design and Analyze the Effect of Hetero Material and Dielectric on TFETwith Dual Work Function Engineering
Journal: Nanoscience & Nanotechnology-Asia
Volume: 14 Issue: 1 Year: 2024 Page: 30-39
Author(s):
Analytical Modeling of D.C. Parameters of Double Gate Junctionless MOSFET in Near and Subthreshold Regime for RF Circuit Application
Journal: Nanoscience & Nanotechnology-Asia
Volume: 10 Issue: 4 Year: 2020 Page: 457-470
Author(s): Dipanjan Sen,Savio J. Sengupta,Swarnil Roy,Manash Chanda,Subir K. Sarkar
Impact of Electrode Length on I-V Characteristics to Linearity of TFET With Source Pocket
Ebook: Nanoelectronics Devices: Design, Materials, and Applications (Part I)
Volume: 1 Year: 2023
Author(s):
Doi: 10.2174/9789815136623123010009
Analysis of Negative to Positive Differential Conductance Transition in NCFET and Guidelines for Analog Circuit Designing
Ebook: Nanoscale Field Effect Transistors: Emerging Applications
Volume: 1 Year: 2023
Author(s):
Doi: 10.2174/9789815165647123010009
Device Structure Modifications in Conventional Tunnel Field Effect Transistor (TFET) for Low-power Applications
Ebook: Nanoelectronics Devices: Design, Materials, and Applications (Part I)
Volume: 1 Year: 2023
Author(s):
Doi: 10.2174/9789815136623123010008
Application of Oxynitrides for Microelectronic Devices and Gas Barriers
Ebook: Metallic Oxynitride Thin Films by Reactive Sputtering and Related Deposition Methods: Process, Properties and Applications
Volume: 1 Year: 2013
Author(s): Yung-Hsien Wu,Jia-Hong Huang
Doi: 10.2174/9781608051564113010016
Performance Analysis of Electrical Characteristics of Hetero-junction LTFET at Different Temperatures for IoT Applications
Ebook: Nanoelectronics Devices: Design, Materials, and Applications (Part I)
Volume: 1 Year: 2023
Author(s):
Doi: 10.2174/9789815136623123010007
Comparative Studies on the Aggregation Behavior of HBPs from Human Seminal Plasma by Dynamic Light Scattering
Journal: Protein & Peptide Letters
Volume: 15 Issue: 6 Year: 2008 Page: 633-639
Author(s): Vijay Kumar, Md. Imtaiyaz Hassan, Tej P. Singh, Savita Yadav