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Recent Advances in Electrical & Electronic Engineering

Editor-in-Chief

ISSN (Print): 2352-0965
ISSN (Online): 2352-0973

Research Article

PVT Aware Design of a Dead-zone Free High Speed Phase Frequency Detector in 90nm CMOS

Author(s): Suraj K. Saw, Madhusudan Maiti, Preetisudha Meher and Alak Majumder*

Volume 13, Issue 4, 2020

Page: [516 - 530] Pages: 15

DOI: 10.2174/2352096512666190314111752

Price: $65

Abstract

Background & Introduction: With the advent of technology, though the literature highlights many designs of Phase Frequency Detector (PFD), there remains some challenges like area overhead, switching noise near frequency lock point and fast, accurate response to mitigate dead zone and output errors.

Methods: In this article, we have unearthed a low power, high speed and dead zone free PFD, which eliminates the switching noise near that lock-in node. This simple design uses lesser number of transistors to obtain smaller estimated layout area of 0.748mm2 and low power of 496.12μW, when operated at 10 GHz frequency at a power supply of 1.8V in 90nm CMOS technology.

Results: The simulation reads a phase noise and output noise of -113.142dBc/Hz and -180.712dB at 1MHz offset. The circuit not only runs at a frequency as high as 40GHz, but also compatible to be operated at a power supply of as small as 0.9V.

Conclusion: Process Variation analysis performed proves the robustness of the proposed circuit at all process corners. Also, the design gets validated at lower process nodes like 28nm UMC.

Keywords: Phase frequency detector, dead zone, lock-in-time, output noise, phase frequency detector, blind zone.

Graphical Abstract


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