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Nanoscience & Nanotechnology-Asia

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ISSN (Print): 2210-6812
ISSN (Online): 2210-6820

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Research Article

Multiple Quantum Barrier Nano-avalanche Photodiodes - Part III: Time and Frequency Responses

Author(s): Somrita Ghosh and Aritra Acharyya*

Volume 9, Issue 2, 2019

Page: [192 - 197] Pages: 6

DOI: 10.2174/2210681208666180813122642

Price: $65

Abstract

Background: The time and frequency responses of Multiple Quantum Barrier (MQB) nano-scale Avalanche Photodiodes (APDs) based on Si~3C-SiC material system have been investigated in this final part.

Methods: A very narrow rectangular pulse of pulse-width of 0.4 ps has been used as the input optical pulse having 850 nm wavelength incidents on the p+-side of the MQB APD structures and corresponding current responses have been calculated by using a simulation method developed by the authors.

Results: Finally the frequency responses of the devices are obtained via the Fourier transform of the corresponding pulse current responses in time domain.

Conclusion: Simulation results show that MQB nano-APDs possess significantly faster time response and wider frequency response as compared to the flat Si nano-APDs under similar operating conditions.

Keywords: Avalanche photodiode, dark current, multiple quantum barrier, photocurrent, quantum well, self-consistent solution, spectral response.

Graphical Abstract

[1]
Ghosh, S.; Acharyya, A. Multiple quantum barrier nano-avalanche photodiodes - Part I: Spectral Response. Nanosci. Nanotechnol. Asia, 2019. [EPub ahead of Print].
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Ghosh, S.; Acharyya, A. Multiple quantum barrier nano-avalanche photodiodes - Part II: Excess noise characteristics. Nanosci. Nanotechnol. Asia, 2019. [EPub ahead of Print].
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