Chemical Bath Deposition of Undoped and Bi-doped n-Cu2Se Films and their Optoelectrical Properties

Title:Chemical Bath Deposition of Undoped and Bi-doped n-Cu2Se Films and their Optoelectrical Properties

Volume: 8 Issue: 2

Author(s): Hai-Yan He*Jing Lu

Affiliation:

• College of Material Science and Engineering, Shaanxi University of Science and Technology, Xian- Yang, 710021,China

Keywords: Cu2Se, doping, semiconductor, film deposition, optical property, electrical property.

Abstract: Introduction: The effluence of Bi3+ doping on the microstructure and property of the undoped and Bi3+-doped Cu2Se films deposited by chemical bath deposition were studied.

Methods: The films showed average UV-visible transmittances of ~73.29-84.10 % that increased with increasing Bi3+ content. The optical bandgaps calculated from optical spectra increased with increasing Bi3+ content. Strong bandgap emission at ~629 nm was also observed. Moreover, the films had actual Se/Cu<2 and n-type conductive.

Result: The sheet resistance of ~4.13-96.44×10-3 Ω·cm first decreased and then increased with the increase in Bi content.

Conclusion: Various optical constants of the films were estimated with the UV-visible light spectra.

Cite this article as:

He Hai-Yan *, Lu Jing , Chemical Bath Deposition of Undoped and Bi-doped n-Cu2Se Films and their Optoelectrical Properties, Nanoscience & Nanotechnology-Asia 2018; 8 (2) . https://dx.doi.org/10.2174/2210681208666180517094621