Joining of Individual Silicon Carbide Nanowires Via Proton Beam Irradiation

Title:Joining of Individual Silicon Carbide Nanowires Via Proton Beam Irradiation

Volume: 14 Issue: 5

Author(s): Muhammad Rashid Khan, Muhammad Abdul Rauf Khan, Ishaq Ahmad*, Muhammad Abdullah Khan, Tariq Iqbal, Fabian Ifeanyichukwu Ezema and Maaza Malek

Affiliation:

• National Center for Physics, Quaid-i-Azam University, Islamabad 44000,Pakistan

Keywords: SiC nanowires, proton irradiation, nanojoining, transmission electron microscopy, X-ray diffraction, nanodevices.

Abstract: Background: Joining nanosized building blocks is a promising approach to fabricate functional nanodevices and nanosystems. Nanojoining approach also helps in integrating these nanodevices and nanosystems for the miniaturization of devices. The nanodevices are mainly fabricated by joining metallic and semiconductor nanowires/nanotubes.

Objective: Silicon Carbide Nanowires (SiC-NWs) have become important nanomaterials for future nanoscale devices due to their unique physical properties.

Method: In this paper, nanowelding of SiC-NWs has been demonstrated using ion beam technology. SiC-NWs were irradiated by 5 MeV proton beam as per SRIM code simulation. Nanojoining of SiC-NWs was confirmed by scanning electron microscopy, transmission electron microscopy and X-ray diffraction.

Conclusion: Joining of individual SiC-NWs by 5 MeV proton beam irradiation was successfully achieved at the contact point as X-, Y-, II-, and T-shaped welded junctions.

Cite this article as:

Khan Rashid Muhammad , Rauf Khan Abdul Muhammad , Ahmad Ishaq *, Khan Abdullah Muhammad , Iqbal Tariq , Ifeanyichukwu Ezema Fabian and Malek Maaza , Joining of Individual Silicon Carbide Nanowires Via Proton Beam Irradiation, Current Nanoscience 2018; 14 (5) . https://dx.doi.org/10.2174/1573413714666180328153514