Symmetrical Dipole Contribution from Planar Defects on m-plane ZnO Epitaxial Films

Title:Symmetrical Dipole Contribution from Planar Defects on m-plane ZnO Epitaxial Films

Volume: 10 Issue: 6

Author(s): Chung-Wei Liu, Shoou-Jinn Chang, Yen-Teng Ho, Li Chang, Kuang-Yao Lo and Sanjaya Brahma

Affiliation:

Keywords: Basal stacking fault, non-polar plane, second harmonic generation, ZnO.

Abstract: The planar defects such as basal stacking faults (BSFs) are probed on m-plane ZnO grown on LaAlO₃(112) substrate by reflective second harmonic generation (RSHG). The BSFs result in nonvanishing single-direction dipoles that behave similar to a mirror-like symmetrical dipole. The RSHG pattern from m-plane ZnO comprised of not only the bulk dipole contribution of ZnO but also an additional mirror-like symmetrical dipole contribution from BSF defects. Transmission electron microscopy image displays the presence of BSFs that lie in the c-plane of ZnO and agrees well with RSHG results. Planar BSFs are formed due to the anisotropic stress relaxation between m-plane ZnO film and LaAlO₃(112) substrate, resulting in higher-quality m-plane ZnO films.

Cite this article as:

Liu Chung-Wei, Chang Shoou-Jinn, Ho Yen-Teng, Chang Li, Lo Kuang-Yao and Brahma Sanjaya, Symmetrical Dipole Contribution from Planar Defects on m-plane ZnO Epitaxial Films, Current Nanoscience 2014; 10 (6) . https://dx.doi.org/10.2174/1573413710666140526233427