CFD Simulation of Chemical Vapor Deposition of Silicon Carbide in CH₃SiCl₃-H₂ System

Title:CFD Simulation of Chemical Vapor Deposition of Silicon Carbide in CH₃SiCl₃-H₂ System

Volume: 10 Issue: 1

Author(s): Kyoon Choi and Jun-Woo Kim

Affiliation:

Keywords: Chemical vapor deposition, computational fluid dynamic, methyltrichlorosilane, modeling, silicon carbide, simulation, thermodynamic calculation.

Abstract: The CVD apparatus for the uniform coating of silicon carbide was suggested and realized into a 3-dimensional computer-aided design (CAD) model. An experimental condition is simulated with a computational fluid dynamic program to obtain temperature and flow distribution in the CVD chamber. The simulated temperature showed the very uniform distribution especially in the hot zone region and that is thought to be the result of the design of the CVD apparatus. The temperature measured with a thermocouple showed the good matching with the simulated one, which reflected the assumption and the boundary conditions during the simulation were plausible.

Cite this article as:

Choi Kyoon and Kim Jun-Woo, CFD Simulation of Chemical Vapor Deposition of Silicon Carbide in CH₃SiCl₃-H₂ System, Current Nanoscience 2014; 10 (1) . https://dx.doi.org/10.2174/1573413709666131109003414