Graphene-based Flexible Field Effect Transistor with Inkjet Printed Silver Electrodes

Zhuo      Wang; Andrew   P.   Cook; Xuesong      Yang; Zhihong      Liu; Qingkai      Yu; Maggie   Y.   Chen

doi:10.2174/15734137113099990064

Abstract

We demonstrate a method to fabricate flexible field effect transistors based on mask-free inkjet printed silver micro-electrodes and wet-transfer of chemical vapor deposition grown graphene. The process is simple, low-cost and repeatable. The transistor shows a field-effect hole mobility of 33 cm²/Vs and on/off ratio of 2.1 with high drain current of 54 mA, which is the highest reported in air at room temperature.

Keywords: Graphene, flexible electronics, field effect transistor, inkjet printing.

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Current Nanoscience

Title:Graphene-based Flexible Field Effect Transistor with Inkjet Printed Silver Electrodes

Volume: 9 Issue: 5

Author(s): Zhuo Wang, Andrew P. Cook, Xuesong Yang, Zhihong Liu, Qingkai Yu and Maggie Y. Chen

Affiliation:

Keywords: Graphene, flexible electronics, field effect transistor, inkjet printing.

Abstract: We demonstrate a method to fabricate flexible field effect transistors based on mask-free inkjet printed silver micro-electrodes and wet-transfer of chemical vapor deposition grown graphene. The process is simple, low-cost and repeatable. The transistor shows a field-effect hole mobility of 33 cm²/Vs and on/off ratio of 2.1 with high drain current of 54 mA, which is the highest reported in air at room temperature.

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Wang Zhuo, Cook P. Andrew, Yang Xuesong, Liu Zhihong, Yu Qingkai and Chen Y. Maggie, Graphene-based Flexible Field Effect Transistor with Inkjet Printed Silver Electrodes, Current Nanoscience 2013; 9 (5) . https://dx.doi.org/10.2174/15734137113099990064