Abstract
P-wave-enhanced spin field-effect transistor made of AlGaN/GaN heterostructure was designed for the spintronic devices operated at high power and high temperature. The operation theory is based on the spin-polarized field-effect transistor designed by Datta and Das [Appl. Phys. Lett. 56, 665 (1990)]. The mechanism of the p-wave enhancement in AlGaN/GaN heterostructure was investigated. The recent development and related patents in the spin-polarized field-effect transistor were reviewed. In particular, we will focus on the recent patents which could enhance p-wave probability and control of spin precession of 2DEG in the AlGaN/GaN transistor structure.
Keywords: Spin-FET, spin-orbital interaction, Rashba effect, Dresselhaus effect, spintronics
Related Books
The Art of Nanomaterials
Advanced Materials and Nano Systems: Theory and Experiment - Part 2
Advanced Materials and Nano Systems: Theory and Experiment (Part-1)
Artificial Intelligence for Smart Cities and Villages: Advanced Technologies, Development, and Challenges
SILVER NANOPARTICLES: Synthesis, Functionalization and Applications
1