Impact of Nano-Texturing in GaN-based Light Emitting Diodes by Self-Assembled Silver Microspheres as Etch Mask

Title: Impact of Nano-Texturing in GaN-based Light Emitting Diodes by Self-Assembled Silver Microspheres as Etch Mask

Volume: 7 Issue: 6

Author(s): Periyayya Uthirakumar, Beo Deul Ryu, Ji Hye Kang, Hyung Gu Kim and Chang-Hee Hong

Affiliation:

Keywords: Optoelectronics, silver microspheres, surface texturing, light-emitting diodes, microstructure, Etch Mask

Abstract: We demonstrate a facile one-step thermal conversion method for the formation of self-assembled three dimensional silver (Ag) microspheres. The total conversion of Ag microspheres from the source materials at an elevated temperature is confirmed via various characterization techniques. The density of self-assembled Ag microspheres can be controlled by adjusting the precursor solution concentration. p-GaN nano-texturing is performed using an inductively coupled plasma (ICP) treatment, with the help of self-assembled Ag microspheres as a mask. The light extraction efficiency of the p-GaN nano-textured light emitting diode (LED) shows a significant improvement of ˜25% over that of conventional LEDs at an injection current of 20 mA.

Cite this article as:

Uthirakumar Periyayya, Deul Ryu Beo, Hye Kang Ji, Gu Kim Hyung and Hong Chang-Hee, Impact of Nano-Texturing in GaN-based Light Emitting Diodes by Self-Assembled Silver Microspheres as Etch Mask, Current Nanoscience 2011; 7 (6) . https://dx.doi.org/10.2174/157341311798220673