The Drift Response to a High-Electric-Field in Carbon Nanotubes

Rachana      Vidhi; Michael   L. P.   Tan; Tanuj      Saxena; Abdul   Manaf   Hashim; Vijay   K.   Arora

doi:10.2174/157341310797575050

Abstract

The carrier statistics in carbon nanotubes (CNTs) with nonparabolic energy spectrum is studied in order to predict the ultimate (intrinsic) drift velocity as a function of temperature, concentration, and chirality. The extremely high mobilities in CNTs do not necessarily lead to higher saturation velocity that is limited to the intrinsic velocity calculated using Aroras formalism [V. K. Arora, Current Nanoscience 5, 227(2009)]. The ballistic nature of the mobility when CNT length is smaller than the scattering-limited mean free path is delineated. The results are of enormous importance in extracting carrier transport properties from a variety of experiments performed on CNTs.

Keywords: Carbon nanotubes, CNT, carrier concentration, high-electric-field transport, intrinsic velocity, saturation velocity, Drift Response, High-Electric-Field, Arora's formalism, high intrinsic transconductance, transistor (MOSFET), CNT transistors, Arora's nonequilibrium distribution function, graphene nanostructures, Monte Carlo experiments, CNT devices, Nonparabolic energy, double-wall CNT transistor, Shur's model, Ballistic Mobility, Fermi-Dirac distribution function, field effect transistor (FET)