Abstract
In this research, RF magnetron sputtering was employed to grow 3D nano-structured ITO thin films using the barrier-layer side of an anodic aluminum oxide (AAO) as the template. The template was prepared by immersing this side of an AAO film into a 30 wt% phosphoric acid solution to modify the surface of the barrier layer in such a manner that a contrasting surface was obtained. The resistivity and crystallinity of the deposited ITO thin film were characterized by I-V curves and X-ray diffraction (XRD). As illustrated in the I-V curve measurements, the resistivity of the ITO film after annealing was 8.25x10-3 Ω -cm. The XRD analysis results of the annealed ITO film clearly showed the characteristic (222) and (400) peaks which characterize the crystallinity. A nano-hemispheric TiO2/ITO array electrode for dye-sensitized solar cells (DSSC) was further fabricated through electrophoretic deposition of TiO2 nanoparticles on the nano-hemispheric ITO array.
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