Abstract
Introduction: This work represents the influence of gate dielectric, and the nano-cavity gap of a dielectric modulated trench gate Junction-less Double Gate Field Effect Transistor (JL-DGFET) on the different performance indicators is investigated considering the Low-Frequency Noise.
Methods: It is noted that the gate dielectric and the nanogap, both parameters, have a substantial influence on the sensing capacity and performance of noise of the device.
Results: A double gate suitable dielectric material and cavity thickness can effectively improve the biosensor’s sensitivity with a minimum amount of noise.
Conclusion: The sensitivity is found to increase up to 9.5 for dielectric constant, k = 3.57 and 6.5 for dielectric constant, k = 2.1.
