Optimization of Double-Gate Carbon Nanotube FET Characteristics for Short Channel Devices

Title:Optimization of Double-Gate Carbon Nanotube FET Characteristics for Short Channel Devices

Volume: 17

Author(s): Vijai M. Moorthy*, Rethinasamy Venkatesan and Viranjay M. Srivastava

Affiliation:

• Department of Electronic Engineering, University of KwaZulu-Natal, Durban,South Africa

Abstract: Introduction: Transistors are the fundamental electronic component integrated into electronic devices' chips Carbon Nano Tube (CNT) based field.

Methods: Effect Transistor (FET) is a promising component for next-generation transistor technologies; as it has high carrier mobility, device stability, and mechanical flexibility. Nevertheless, some shortcomings in the CNT FET's design prevent it from providing the best performance while preserving thermal stability.

Results: The structure and functionality of transistors with Double-Gate (DG) devices, which use carbon nanotubes as active channel regions, have been examined by the authors of this study. The DG CNT FET has been extensively simulated using an electronic device simulator with various device geometrics, including channel length, oxide thickness for its output, and transfer characteristics. In comparison to reported patents and published works, this demonstrates a significant improvement

Conclusion: A new perspective on the DG CNT FET's device performance characteristics is provided by this research work, which can be scaled down to minimum channel length without Short Channel Effects (SCEs).

Cite this article as:

Moorthy M. Vijai*, Venkatesan Rethinasamy and Srivastava M. Viranjay, Optimization of Double-Gate Carbon Nanotube FET Characteristics for Short Channel Devices, Recent Patents on Nanotechnology 2023; 17 () . https://dx.doi.org/10.2174/1872210517666230622123317