Abstract
Chemical vapor deposition (CVD) represents the method-of-choice for thin film growth, as well as nanomaterials such as carbon nanotubes. Distinct advantages of this technique include low cost, and strict control over the resultant film stoichiometry, morphology, and thickness. The most critical component of a CVD process is the precursor that is employed. Hence, there has been a continuing interest in the development of new CVD precursors that would be useful for a range of thin film applications.
Keywords: silicon thin films, sol-gel (S-G) techniques, self-assembled monolayers (SAMs), atomic layer deposition (ALD), Metal cyclopentadienyl complexes, aforementioned precursors
Call for Papers in Thematic Issues
Catalytic C-H bond activation as a tool for functionalization of heterocycles
The major topic is the functionalization of heterocycles through catalyzed C-H bond activation. The strategies based on C-H activation not only provide straightforward formation of C-C or C-X bonds but, more importantly, allow for the avoidance of pre-functionalization of one or two of the cross-coupling partners. The beneficial impact of ...read more
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